Part Number | PEMB18,115 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - Bipolar (BJT) - Arrays, Pre-Biased |
Brand | NXP Semiconductors |
Description | TRANS 2PNP PREBIAS 0.3W SOT666 |
Series | - |
Packaging | Tape & Reel (TR) |
Transistor Type | 2 PNP - Pre-Biased (Dual) |
Current - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) (Ohms) | 4.7k |
Resistor - Emitter Base (R2) (Ohms) | 10k |
DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 10mA, 5V |
Vce Saturation (Max) @ Ib, Ic | 150mV @ 500µA, 10mA |
Current - Collector Cutoff (Max) | 1µA |
Frequency - Transition | - |
Power - Max | 300mW |
Mounting Type | Surface Mount |
Package / Case | SOT-563, SOT-666 |
Supplier Device Package | SOT-666 |
Image |
PEMB18,115
NxpSemiconductors
8000
0.56
MY Group (Asia) Limited
PEMB18115
NXP Semiconductor
7423
1.6025
Dedicate Electronics (HK) Limited
PEMB18,115
WEEN/NXP
50000
2.645
VIPOWER TECHNOLOGY LIMITED
PEMB18,115
NXP/Freescal
20000
3.6875
Ande Electronics Co., Limited
PEMB18
NXP
38500
4.73
OCEANIA INTERNATIONAL INDUSTRIAL LIMITED