Part Number | PEMD2,115 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - Bipolar (BJT) - Arrays, Pre-Biased |
Brand | NXP Semiconductors |
Description | TRANS PREBIAS NPN/PNP SOT666 |
Series | - |
Packaging | Tape & Reel (TR) |
Transistor Type | 1 NPN, 1 PNP - Pre-Biased (Dual) |
Current - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) (Ohms) | 22k |
Resistor - Emitter Base (R2) (Ohms) | 22k |
DC Current Gain (hFE) (Min) @ Ic, Vce | 60 @ 5mA, 5V |
Vce Saturation (Max) @ Ib, Ic | 150mV @ 500µA, 10mA |
Current - Collector Cutoff (Max) | 1µA |
Frequency - Transition | - |
Power - Max | 300mW |
Mounting Type | Surface Mount |
Package / Case | SOT-563, SOT-666 |
Supplier Device Package | SOT-666 |
Image |
PEMD2115
NxpSemiconductors
9200
1.28
HK HEQING ELECTRONICS LIMITED
PEMD2,115
NXP Semiconductor
5316
2.385
CIS Ltd (CHECK IC SOLUTION LIMITED)
PEMD2115
WEEN/NXP
194
3.49
FLOWER GROUP(HK)CO.,LTD
PEMD2,115
NXP/Freescal
8332
4.595
TERNARY UNION CO., LIMITED
PEMD2,115
NXP
9935
5.7
Redstar Electronic Limited