Part Number | PEMD30,115 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - Bipolar (BJT) - Arrays, Pre-Biased |
Brand | NXP Semiconductors |
Description | TRANS PREBIAS NPN/PNP SOT666 |
Series | - |
Packaging | Tape & Reel (TR) |
Transistor Type | 1 NPN, 1 PNP - Pre-Biased (Dual) |
Current - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) (Ohms) | 2.2k |
Resistor - Emitter Base (R2) (Ohms) | - |
DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 20mA, 5V |
Vce Saturation (Max) @ Ib, Ic | 150mV @ 500µA, 10mA |
Current - Collector Cutoff (Max) | 1µA |
Frequency - Transition | - |
Power - Max | 300mW |
Mounting Type | Surface Mount |
Package / Case | SOT-563, SOT-666 |
Supplier Device Package | SOT-666 |
Image |
PEMD30,115
NxpSemiconductors
8000
1.19
MY Group (Asia) Limited
PEMD30,115
NXP Semiconductor
31320
2.085
Shenzhen Shengyu Electronics Technology Limited
PEMD30,115
WEEN/NXP
50000
2.98
VIPOWER TECHNOLOGY LIMITED
PEMD30115
NXP/Freescal
5799
3.875
Dedicate Electronics (HK) Limited
PEMD30,115
NXP
20000
4.77
Ande Electronics Co., Limited