Part Number | PH8230E,115 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | NXP Semiconductors |
Description | MOSFET N-CH 30V 67A LFPAK |
Series | TrenchMOS |
Packaging | |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | 67A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 2.5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs | 14nC @ 5V |
Input Capacitance (Ciss) (Max) @ Vds | 1400pF @ 10V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 62.5W (Tc) |
Rds On (Max) @ Id, Vgs | 8.2 mOhm @ 10A, 10V |
Operating Temperature | - |
Mounting Type | Surface Mount |
Supplier Device Package | LFPAK56, Power-SO8 |
Package / Case | SC-100, SOT-669 |
Image |
PH8230E115
NxpSemiconductors
1500
1.77
Bonase Electronics (HK) Co., Limited
PH8230E,115
NXP Semiconductor
1000
2.73
MY Group (Asia) Limited
PH8230E115
WEEN/NXP
13116
3.69
Dedicate Electronics (HK) Limited
PH8230E,115
NXP/Freescal
30000
4.65
HK CSY-ELECTRONICS CO., LIMITED
PH8230E,115
NXP
30000
5.61
HONG KONG HORNG SHING LIMITED