Part Number | PHD63NQ03LT118 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | NXP Semiconductors |
Description | MOSFET N-CH 30V 68.9A DPAK |
Series | TrenchMOS |
Packaging | Tape & Reel (TR) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | 68.9A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 2.5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs | 9.6nC @ 5V |
Input Capacitance (Ciss) (Max) @ Vds | 920pF @ 25V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 111W (Tc) |
Rds On (Max) @ Id, Vgs | 13 mOhm @ 25A, 10V |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | DPAK |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Image |
PHD63NQ03LT,118
NxpSemiconductors
2000
0.29
ONSTAR ELECTRONICS CO., LIMITED
PHD63NQ03LT,118
NXP Semiconductor
15000
1.38
Topland Technologies Limited
PHD63NQ03LT,118
WEEN/NXP
1000
2.47
MY Group (Asia) Limited
PHD63N03LT
NXP/Freescal
7600
3.56
Ande Electronics Co., Limited
PHD63NQ03LT
NXP
9080
4.65
Hong Kong In Fortune Electronics Co., Limited