Part Number | PHD9NQ20T,118 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | NXP Semiconductors |
Description | MOSFET N-CH 200V 8.7A DPAK |
Series | TrenchMOS |
Packaging | Tape & Reel (TR) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 200V |
Current - Continuous Drain (Id) @ 25°C | 8.7A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 4V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs | 24nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 959pF @ 25V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 88W (Tc) |
Rds On (Max) @ Id, Vgs | 400 mOhm @ 4.5A, 10V |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | DPAK |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Image |
PHD9NQ20T,118
NxpSemiconductors
6007
1.9
MY Group (Asia) Limited
PHD9NQ20T,118
NXP Semiconductor
9791
2.66
All True Tech Electronic Co., Limited
PHD9NQ20T,118
WEEN/NXP
2086
3.42
Redstar Electronic Limited
PHD9NQ20T,118
NXP/Freescal
6216
4.18
Feture Technology Limited
PHD9NQ20T,118 IC
NXP
5608
4.94
CIS Ltd (CHECK IC SOLUTION LIMITED)