Part Number | PHT6N06T,135 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | NXP Semiconductors |
Description | MOSFET N-CH 55V 5.5A SOT223 |
Series | TrenchMOS |
Packaging | |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 55V |
Current - Continuous Drain (Id) @ 25°C | 5.5A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 4V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs | 5.6nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 175pF @ 25V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 8.3W (Tc) |
Rds On (Max) @ Id, Vgs | 150 mOhm @ 5A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | SOT-223 |
Package / Case | TO-261-4, TO-261AA |
Image |
PHT6N06T,135
NxpSemiconductors
1000
0.84
MY Group (Asia) Limited
PHT6N06T135
NXP Semiconductor
124000
1.85
Bonase Electronics (HK) Co., Limited
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WEEN/NXP
7783
2.86
Dedicate Electronics (HK) Limited
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3260
3.87
ONSTAR ELECTRONICS CO., LIMITED
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20000
4.88
Ande Electronics Co., Limited