Part Number | PHU11NQ10T,127 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | NXP Semiconductors |
Description | MOSFET N-CH 100V 10.9A SOT533 |
Series | TrenchMOS |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25°C | 10.9A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 4V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs | 14.7nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 360pF @ 25V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 57.7W (Tc) |
Rds On (Max) @ Id, Vgs | 180 mOhm @ 9A, 10V |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | I-Pak |
Package / Case | TO-251-3 Short Leads, IPak, TO-251AA |
Image |
PHU11NQ10T,127
NxpSemiconductors
1000
1.06
MY Group (Asia) Limited
PHU11NQ10T,127
NXP Semiconductor
4000
1.8
Digchip Technology Co.,Limited
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93750
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CHIPSMALL LIMITED
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15121
3.28
Dedicate Electronics (HK) Limited
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3215
4.02
Hong Kong In Fortune Electronics Co., Limited