NXP Semiconductors

Description

Apr 2, 1995 PMBFJ174 to 177. DESCRIPTION. Silicon symmetrical p-channel junction FETs in plastic microminiature SOT23 envelopes.They are intended P-channel Junction Field-effect transistors for switching. RDSON. (V) (mA). ( ) max max min max min max max min max typ max typ max. PMBFJ174 . SOT23. 30. V(p)GS. RDSON. Crs ton toff. (V). (mA). (mA). (V). ( ). (pF). (ns). (ns). . max max min max min max max min max typ max typ max. PMBFJ174 . SOT23. Dec 31, 2011 PMBFJ174 . P-channel sil. field-effect trans. No. Full. Withdrawal. 30-jun-2012. 31 -dec-2012. HIGH PERFORMANCE RF Multiple Source. P-channel Junction Field-effect transistors for switching. RDSON. (V). (mA). ( ) max max min max min max max min max typ max typ max. PMBFJ174 . SOT23. 30.