Part Number | PMCM6501VPEZ |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | NXP Semiconductors |
Description | MOSFET P-CH 12V 6WLCSP |
Series | - |
Packaging | Cut Tape (CT) |
FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 12V |
Current - Continuous Drain (Id) @ 25°C | 6.2A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 900mV @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 29.4nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds | 1400pF @ 6V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 556mW (Ta), 12.5W (Tc) |
Rds On (Max) @ Id, Vgs | 25 mOhm @ 3A, 4.5V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | 6-WLCSP (1.48x.98) |
Package / Case | 6-XFBGA, WLCSP |
Image |
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