(5/5) based on 15 customer reviews
Description
MOSFET N/P-CH 20V 6HUSON Series: - FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25～C: 5.3A, 3.4A Rds On (Max) @ Id, Vgs: 34 mOhm @ 3A, 4.5V Vgs(th) (Max) @ Id: 900mV @ 250米A Gate Charge (Qg) @ Vgs: 21.7nC @ 4.5V Input Capacitance (Ciss) @ Vds: 660pF @ 10V Power - Max: 490mW Operating Temperature: -55～C ~ 150～C (TJ) Mounting Type: Surface Mount Package / Case: 6-UDFN Exposed Pad Supplier Device Package: 6-HUSON (2x2)
| Part Number | PMCPB5530X,115 |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - Arrays |
| Brand | NXP Semiconductors |
| Description | MOSFET N/P-CH 20V 6HUSON |
| Series | - |
| Packaging | Cut Tape (CT) |
| FET Type | N and P-Channel |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 5.3A, 3.4A |
| Rds On (Max) @ Id, Vgs | 34 mOhm @ 3A, 4.5V |
| Vgs(th) (Max) @ Id | 900mV @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 21.7nC @ 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds | 660pF @ 10V |
| Power - Max | 490mW |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 6-UDFN Exposed Pad |
| Supplier Device Package | DFN2020-6 |
| Image |  |
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