(4/5) based on 4 customer reviews
Description
MOSFET N/P-CH 20V 0.6A/0.5A 6DFN Series: TrenchFET? FET Type: N and P-Channel Complementary FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25～C: 600mA, 500mA Rds On (Max) @ Id, Vgs: 620 mOhm @ 600mA, 4.5V Vgs(th) (Max) @ Id: 950mV @ 250米A Gate Charge (Qg) @ Vgs: 0.7nC @ 4.5V Input Capacitance (Ciss) @ Vds: 21.3pF @ 10V Power - Max: 265mW Operating Temperature: -55～C ~ 150～C (TJ) Mounting Type: Surface Mount Package / Case: 6-XFDFN Exposed Pad Supplier Device Package: 6-DFN (1.1x1)
| Part Number | PMCXB900UEZ |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - Arrays |
| Brand | NXP Semiconductors |
| Description | MOSFET N/P-CH 20V 0.6A/0.5A 6DFN |
| Series | TrenchFET |
| Packaging | Tape & Reel (TR) |
| FET Type | N and P-Channel Complementary |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 600mA, 500mA |
| Rds On (Max) @ Id, Vgs | 620 mOhm @ 600mA, 4.5V |
| Vgs(th) (Max) @ Id | 950mV @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 0.7nC @ 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds | 21.3pF @ 10V |
| Power - Max | 265mW |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 6-XFDFN Exposed Pad |
| Supplier Device Package | 6-DFN (1.1x1) |
| Image |  |
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