Part Number | PMDPB30XN,115 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Arrays |
Brand | NXP Semiconductors |
Description | MOSFET 2N-CH 20V 4A 6HUSON |
Series | - |
Packaging | Cut Tape (CT) |
FET Type | 2 N-Channel (Dual) |
FET Feature | Logic Level Gate |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25°C | 4A |
Rds On (Max) @ Id, Vgs | 40 mOhm @ 3A, 4.5V |
Vgs(th) (Max) @ Id | 900mV @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 21.7nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds | 660pF @ 10V |
Power - Max | 490mW |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | 6-UDFN Exposed Pad |
Supplier Device Package | DFN2020-6 |
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PMDPB30XN,115
NxpSemiconductors
8335
0.45
Finestock Electronics HK Limited
PMDPB30XN,115
NXP Semiconductor
8221
1.6675
Cinty Int'l (HK) Industry Co., Limited
PMDPB30XN,115
WEEN/NXP
453
2.885
RX ELECTRONICS LIMITED
PMDPB30XN,115
NXP/Freescal
439
4.1025
Redstar Electronic Limited
PMDPB30XN115
NXP
5458
5.32
Ande Electronics Co., Limited