(5/5) based on 17 customer reviews
Description
MOSFET 2N-CH 30V 3.1A HUSON6 Series: - FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25～C: 3.1A Rds On (Max) @ Id, Vgs: 73 mOhm @ 3.1A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250米A Gate Charge (Qg) @ Vgs: 2.9nC @ 4.5V Input Capacitance (Ciss) @ Vds: 170pF @ 15V Power - Max: 510mW Operating Temperature: -55～C ~ 150～C (TJ) Mounting Type: Surface Mount Package / Case: 6-UDFN Exposed Pad Supplier Device Package: 6-HUSON (2x2)
| Part Number | PMDPB56XN,115 |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - Arrays |
| Brand | NXP Semiconductors |
| Description | MOSFET 2N-CH 30V 3.1A HUSON6 |
| Series | - |
| Packaging | |
| FET Type | 2 N-Channel (Dual) |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 3.1A |
| Rds On (Max) @ Id, Vgs | 73 mOhm @ 3.1A, 4.5V |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 2.9nC @ 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds | 170pF @ 15V |
| Power - Max | 510mW |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 6-UDFN Exposed Pad |
| Supplier Device Package | DFN2020-6 |
| Image |  |
PMDPB56XN,115
NxpSemiconductors
13500
0.39
HK HEQING ELECTRONICS LIMITED
PMDPB56XN,115
NXP Semiconductor
25860
1.63
YU TUO (HONGKONG) TRADING CO., LIMITED
PMDPB56XN,115
WEEN/NXP
16000
2.87
CIS Ltd (CHECK IC SOLUTION LIMITED)
PMDPB56XN,115
NXP/Freescal
14451
4.11
ATLANTIC TECHNOLOGY LIMITED
PMDPB56XN115
NXP
13500
5.35
Antony Electronic Ltd.
