(5/5) based on 10 customer reviews
Description
MOSFET N/P-CH 20V SOT666 Series: - FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25～C: 800mA, 550mA Rds On (Max) @ Id, Vgs: 380 mOhm @ 500mA, 4.5V Vgs(th) (Max) @ Id: 0.95V @ 250米A Gate Charge (Qg) @ Vgs: 0.68nC @ 4.5V Input Capacitance (Ciss) @ Vds: 83pF @ 10V Power - Max: 500mW Operating Temperature: -55～C ~ 150～C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-666
| Part Number | PMDT290UCE,115 |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - Arrays |
| Brand | NXP Semiconductors |
| Description | MOSFET N/P-CH 20V SOT666 |
| Series | Automotive, AEC-Q101, TrenchMOS |
| Packaging | N and P-Channel |
| FET Type | Cut Tape (CT) |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 800mA, 550mA |
| Rds On (Max) @ Id, Vgs | 380 mOhm @ 500mA, 4.5V |
| Vgs(th) (Max) @ Id | 0.95V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 0.68nC @ 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds | 83pF @ 10V |
| Power - Max | 500mW |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | SOT-563, SOT-666 |
| Supplier Device Package | SOT-666 |
| Image |  |
PMDT290UCE,115
NxpSemiconductors
25860
1.37
YU TUO (HONGKONG) TRADING CO., LIMITED
PMDT290UCE,115
NXP Semiconductor
36081
2.26
OCEANIA INTERNATIONAL INDUSTRIAL LIMITED
PMDT290UCE,115
WEEN/NXP
14532
3.15
ATLANTIC TECHNOLOGY LIMITED
PMDT290UCE115
NXP/Freescal
6792
4.04
Dedicate Electronics (HK) Limited
PMDT290UCE115
NXP
6000
4.93
Antony Electronic Ltd.
