Description
MOSFET 2P-CH 20V 0.5A 6DFN Series: TrenchFET? FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25~C: 500mA Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 500mA, 4.5V Vgs(th) (Max) @ Id: 950mV @ 250米A Gate Charge (Qg) @ Vgs: 2.1nC @ 4.5V Input Capacitance (Ciss) @ Vds: 43pF @ 10V Power - Max: 265mW Operating Temperature: -55~C ~ 150~C (TJ) Mounting Type: Surface Mount Package / Case: 6-XFDFN Exposed Pad Supplier Device Package: 6-DFN (1.1x1)
Part Number | PMDXB950UPE |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Arrays |
Brand | NXP Semiconductors |
Description | MOSFET 2P-CH 20V 0.5A 6DFN |
Series | TrenchFET |
Packaging | |
FET Type | 2 P-Channel (Dual) |
FET Feature | Logic Level Gate |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25°C | 500mA |
Rds On (Max) @ Id, Vgs | 1.4 Ohm @ 500mA, 4.5V |
Vgs(th) (Max) @ Id | 950mV @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 2.1nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds | 43pF @ 10V |
Power - Max | 265mW |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | 6-XFDFN Exposed Pad |
Supplier Device Package | 6-DFN (1.1x1) |
Image |
PMDXB950UPE
NxpSemiconductors
9505
0.45
HK HEQING ELECTRONICS LIMITED
PMDXB950UPE
NXP Semiconductor
783
2.0775
Feture Technology Limited
PMDXB950UPE
WEEN/NXP
180
3.705
SUNTOP SEMICONDUCTOR CO., LIMITED
PMDXB950UPE
NXP/Freescal
5000
5.3325
AMAX ELECTRONIC TECHNOLOGY PTE.LTD.
PMDXB950UPE
NXP
27979
6.96
NEW IDEAS INDUSTRIAL CO., LIMITED