Description
MOSFET 2N-CH 30V 0.125A 6TSSOP Series: TrenchMOS? FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25~C: 125mA Rds On (Max) @ Id, Vgs: 8 Ohm @ 10mA, 4V Vgs(th) (Max) @ Id: 1.5V @ 100米A Gate Charge (Qg) @ Vgs: 0.35nC @ 4.5V Input Capacitance (Ciss) @ Vds: 18.5pF @ 5V Power - Max: 200mW Operating Temperature: -55~C ~ 150~C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: 6-TSSOP
Part Number | PMGD8000LN,115 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Arrays |
Brand | NXP Semiconductors |
Description | MOSFET 2N-CH 30V 0.125A 6TSSOP |
Series | TrenchMOS |
Packaging | 2 N-Channel (Dual) |
FET Type | |
FET Feature | Logic Level Gate |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | 125mA |
Rds On (Max) @ Id, Vgs | 8 Ohm @ 10mA, 4V |
Vgs(th) (Max) @ Id | 1.5V @ 100µA |
Gate Charge (Qg) (Max) @ Vgs | 0.35nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds | 18.5pF @ 5V |
Power - Max | 200mW |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package | 6-TSSOP |
Image |
PMGD8000LN,115
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