Part Number | PMPB27EP,115 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | NXP Semiconductors |
Description | MOSFET P-CH 30V 6.1A 6DFN |
Series | - |
Packaging | |
FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | 6.1A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 45nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 1570pF @ 15V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 1.7W (Ta), 12.5W (Tc) |
Rds On (Max) @ Id, Vgs | 29 mOhm @ 6.1A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | 6-DFN2020MD (2x2) |
Package / Case | 6-UDFN Exposed Pad |
Image |
PMPB27EP,115
NxpSemiconductors
1800
1.7
CIS Ltd (CHECK IC SOLUTION LIMITED)
PMPB27EP115
NXP Semiconductor
4002
3.125
Ysx Tech Co., Limited
PMPB27EP115
WEEN/NXP
5373
4.55
F-power Electronics Co
PMPB27EP,115
NXP/Freescal
8884
5.975
Yataitong Electronic Technology Co., Limited
PMPB27EP115
NXP
9515
7.4
Ande Electronics Co., Limited