Part Number | PMV185XN,215 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | NXP Semiconductors |
Description | MOSFET N-CH 30V 1.1A TO-236AB |
Series | - |
Packaging | |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | 1.1A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 1.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 1.3nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds | 76pF @ 15V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 325mW (Ta), 1.275W (Tc) |
Rds On (Max) @ Id, Vgs | 250 mOhm @ 1.1A, 4.5V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | TO-236AB (SOT23) |
Package / Case | TO-236-3, SC-59, SOT-23-3 |
Image |
PMV185XN,215
NxpSemiconductors
12340
0.39
KDH SEMICONDUCTOR CO., LIMITED
PMV185XN,215
NXP Semiconductor
12340
1.765
HK HEQING ELECTRONICS LIMITED
PMV185XN215
WEEN/NXP
15320
3.14
Feture Technology Limited
PMV185XN,215
NXP/Freescal
25860
4.515
YU TUO (HONGKONG) TRADING CO., LIMITED
PMV185XN,215
NXP
1000
5.89
MY Group (Asia) Limited