Part Number | PMV31XN,215 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | NXP Semiconductors |
Description | MOSFET N-CH 20V 5.9A SOT-23 |
Series | TrenchMOS |
Packaging | |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25°C | 5.9A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 1.5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs | 5.8nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds | 410pF @ 20V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 280mW (Tj) |
Rds On (Max) @ Id, Vgs | 37 mOhm @ 1.5A, 4.5V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | TO-236AB (SOT23) |
Package / Case | TO-236-3, SC-59, SOT-23-3 |
Image |
PMV31XN,215
NxpSemiconductors
13650
1.06
HK HEQING ELECTRONICS LIMITED
PMV31XN215
NXP Semiconductor
29286
2.2325
MASSTOCK ELECTRONICS LIMITED
PMV31XN,215
WEEN/NXP
16150
3.405
CIS Ltd (CHECK IC SOLUTION LIMITED)
PMV31XN215
NXP/Freescal
13650
4.5775
Antony Electronic Ltd.
PMV31XN215
NXP
12238
5.75
Gallop Great Holdings (Hong Kong) Limited