Part Number | PMV60EN,215 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | NXP Semiconductors |
Description | MOSFET N-CH 30V 4.7A SOT-23 |
Series | TrenchMOS |
Packaging | |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | 4.7A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 2V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs | 9.4nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 350pF @ 30V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 280mW (Tj) |
Rds On (Max) @ Id, Vgs | 55 mOhm @ 2A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | TO-236AB (SOT23) |
Package / Case | TO-236-3, SC-59, SOT-23-3 |
Image |
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