Part Number | PMXB350UPEZ |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | NXP Semiconductors |
Description | MOSFET P-CH 20V 1.2A DFN1010D-3 |
Series | - |
Packaging | Tape & Reel (TR) |
FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25°C | 1.2A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 950mV @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 2.3nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds | 116pF @ 10V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 360mW (Ta), 5.68W (Tc) |
Rds On (Max) @ Id, Vgs | 447 mOhm @ 1.2A, 4.5V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | DFN1010D-3 |
Package / Case | 3-XDFN Exposed Pad |
Image |
PMXB350UPEZ
NxpSemiconductors
1000
1.2
MY Group (Asia) Limited
PMXB350UPEZ
NXP Semiconductor
5242
2.37
Dedicate Electronics (HK) Limited
PMXB350UPEZ
WEEN/NXP
3260
3.54
ONSTAR ELECTRONICS CO., LIMITED
PMXB350UPE
NXP/Freescal
18000
4.71
MY Group (Asia) Limited
PMXB350UPE
NXP
3260
5.88
ONSTAR ELECTRONICS CO., LIMITED