Part Number | PMXB360ENEA |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | NXP Semiconductors |
Description | MOSFET N-CH 80V 1.1A 3DFN |
Series | - |
Packaging | Tape & Reel (TR) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 80V |
Current - Continuous Drain (Id) @ 25°C | 1.1A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Vgs(th) (Max) @ Id | 2.7V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 4.5nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 130pF @ 40V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 400mW (Ta), 6.25W (Tc) |
Rds On (Max) @ Id, Vgs | 450 mOhm @ 1.1A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | DFN1010D-3 |
Package / Case | 3-XDFN Exposed Pad |
Image |
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