Part Number | PMXB65ENEZ |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | NXP Semiconductors |
Description | MOSFET N-CH 30V 3.2A 3DFN |
Series | - |
Packaging | Cut Tape (CT) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | 3.2A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Vgs(th) (Max) @ Id | 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 11nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 295pF @ 15V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 400mW (Ta), 8.33W (Tc) |
Rds On (Max) @ Id, Vgs | 67 mOhm @ 3.2A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | DFN1010D-3 |
Package / Case | 3-XDFN Exposed Pad |
Image |
PMXB65ENEZ
NxpSemiconductors
1000
1.62
MY Group (Asia) Limited
PMXB65ENEZ
NXP Semiconductor
15000
2.4175
LANTEK INT'L TRADE LIMITED
PMXB65ENEZ
WEEN/NXP
15000
3.215
Redstar Electronic Limited
PMXB65ENEZ
NXP/Freescal
50000
4.0125
Shenzhen Xinruizhi Technology Limited
PMXB65ENEZ
NXP
3260
4.81
ONSTAR ELECTRONICS CO., LIMITED