Part Number | PMZ350UPEYL |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | NXP Semiconductors |
Description | MOSFET P-CH 20V 1A XQFN3 |
Series | - |
Packaging | |
FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25°C | 1A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
Vgs(th) (Max) @ Id | 950mV @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 1.9nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds | 127pF @ 10V |
Vgs (Max) | ±8V |
FET Feature | - |
Power Dissipation (Max) | 360mW (Ta), 3.125W (Tc) |
Rds On (Max) @ Id, Vgs | 450 mOhm @ 300mA, 4.5V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | DFN1006-3 |
Package / Case | SC-101, SOT-883 |
Image |
Hot Offer
PMZ350UPEYL
NxpSemiconductors
30000
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XINYISHANG CO.,LIMITED
PMZ350UPEYL
NXP Semiconductor
70864
1.13
ICBROS TECHNOLOGY LIMITED
PMZ350UPEYL
WEEN/NXP
180
1.8
SUNTOP SEMICONDUCTOR CO., LIMITED
PMZ350UPEYL
NXP/Freescal
180
2.47
SUNTOP SEMICONDUCTOR CO., LIMITED
PMZ350UPEYL
NXP
180
3.14
SUNTOP SEMICONDUCTOR CO., LIMITED