Part Number | PMZB290UNE2YL |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | NXP Semiconductors |
Description | MOSFET N-CH 20V 1.2A XQFN3 |
Series | - |
Packaging | |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25°C | 1.2A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 1.5V, 4.5V |
Vgs(th) (Max) @ Id | 950mV @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 1.4nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds | 46pF @ 10V |
Vgs (Max) | ±8V |
FET Feature | - |
Power Dissipation (Max) | 350mW (Ta), 5.43W (Tc) |
Rds On (Max) @ Id, Vgs | 320 mOhm @ 1.2A, 4.5V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | DFN1006B-3 |
Package / Case | 3-XFDFN |
Image |
PMZB290UNE2YL
NxpSemiconductors
8018
0.11
Dedicate Electronics (HK) Limited
PMZB290UNE2YL
NXP Semiconductor
8741
0.9475
ONSTAR ELECTRONICS CO., LIMITED
PMZB290UNE2YL
WEEN/NXP
9000
1.785
Redstar Electronic Limited
PMZB290UNE2YL
NXP/Freescal
20000
2.6225
Ande Electronics Co., Limited
PMZB290UNE2YL
NXP
55300
3.46
WEISOK ELECTRONICS (HK) TECHNOLOGY LIMITED