Part Number | PMZB290UNE,315 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | NXP Semiconductors |
Description | MOSFET N-CH 20V 1A DFN1006B-3 |
Series | - |
Packaging | Cut Tape (CT) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25°C | 1A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
Vgs(th) (Max) @ Id | 950mV @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 0.68nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds | 83pF @ 10V |
Vgs (Max) | ±8V |
FET Feature | - |
Power Dissipation (Max) | 360mW (Ta), 2.7W (Tc) |
Rds On (Max) @ Id, Vgs | 380 mOhm @ 500mA, 4.5V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | 3-DFN1006B (0.6x1) |
Package / Case | 3-XFDFN |
Image |
PMZB290UNE,315
NxpSemiconductors
1937
1.17
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4.51
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