Part Number | PSMN013-100ES,127 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | NXP Semiconductors |
Description | MOSFET N-CH 100V I2PAK |
Series | - |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25°C | 68A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 4V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs | 59nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 3195pF @ 50V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 170W (Tc) |
Rds On (Max) @ Id, Vgs | 13.9 mOhm @ 15A, 10V |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | I2PAK |
Package / Case | TO-262-3 Long Leads, I²ÂPak, TO-262AA |
Image |
PSMN013-100ES,127
NxpSemiconductors
811
0.84
MY Group (Asia) Limited
PSMN013-100ES127
NXP Semiconductor
9752
1.2275
Dedicate Electronics (HK) Limited
PSMN013-100ES,127
WEEN/NXP
9473
1.615
VIPOWER TECHNOLOGY LIMITED
PSMN013-100ES,127
NXP/Freescal
1844
2.0025
Ande Electronics Co., Limited
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4954
2.39
RX ELECTRONICS LIMITED