Part Number | PSMN069-100YS,115 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | NXP Semiconductors |
Description | MOSFET N-CH LFPAK |
Series | - |
Packaging | Tape & Reel (TR) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25°C | 17A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 4V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs | 14nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 645pF @ 50V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 56W (Tc) |
Rds On (Max) @ Id, Vgs | 72.4 mOhm @ 5A, 10V |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | LFPAK56, Power-SO8 |
Package / Case | SC-100, SOT-669 |
Image |
PSMN069-100YS,115
NxpSemiconductors
8032
1.85
MY Group (Asia) Limited
PSMN069100YS,115
NXP Semiconductor
6035
3.005
Buye Technology Limited
PSMN069-100YS,115
WEEN/NXP
6392
4.16
Shenzhen Chuanlan Electronics Ltd
PSMN069100YS115
NXP/Freescal
4282
5.315
Antony Electronic Ltd.
PSMN069-100YS;115
NXP
8163
6.47
Prime Semiconductors LLP