Part Number | PSMN070-200P,127 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | NXP Semiconductors |
Description | MOSFET N-CH 200V 35A TO220AB |
Series | TrenchMOS |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 200V |
Current - Continuous Drain (Id) @ 25°C | 35A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 4V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs | 77nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 4570pF @ 25V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 250W (Tc) |
Rds On (Max) @ Id, Vgs | 70 mOhm @ 17A, 10V |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-220AB |
Package / Case | TO-220-3 |
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PSMN070-200P,127
NxpSemiconductors
15000
1.44
MY Group (Asia) Limited
PSMN070-200P,127
NXP Semiconductor
50000
2.3075
VIPOWER TECHNOLOGY LIMITED
PSMN070-200P,127
WEEN/NXP
50000
3.175
Shenzhen Xinruizhi Technology Limited
PSMN070-200P,127
NXP/Freescal
20000
4.0425
Ande Electronics Co., Limited
PSMN070-200B
NXP
4578
4.91
Yingxinyuan INT'L (Group) Limited