Part Number | PSMN165-200K,518 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | NXP Semiconductors |
Description | MOSFET N-CH 200V 2.9A SOT96-1 |
Series | TrenchMOS |
Packaging | Tape & Reel (TR) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 200V |
Current - Continuous Drain (Id) @ 25°C | 2.9A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 4V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs | 40nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 1330pF @ 25V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 3.5W (Tc) |
Rds On (Max) @ Id, Vgs | 165 mOhm @ 2.5A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | 8-SO |
Package / Case | 8-SOIC (0.154", 3.90mm Width) |
Image |
PSMN165-200K,518
NxpSemiconductors
220
0.32
Top Electronics Co.,
PSMN165-200K,518
NXP Semiconductor
1000
0.945
MY Group (Asia) Limited
PSMN165-200K,518
WEEN/NXP
370000
1.57
Lungke Electronics Technology Co., Limited
PSMN165-200K,518
NXP/Freescal
215
2.195
WIN AND WIN ELECTRONICS LIMITED
PSMN165-200K,518
NXP
50000
2.82
VIPOWER TECHNOLOGY LIMITED