Part Number | PSMN1R1-30PL,127 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | NXP Semiconductors |
Description | MOSFET N-CH 30V 120A TO220AB |
Series | - |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | 120A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Vgs(th) (Max) @ Id | 2.2V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs | 243nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 14850pF @ 15V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 338W (Tc) |
Rds On (Max) @ Id, Vgs | 1.3 mOhm @ 25A, 10V |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-220AB |
Package / Case | TO-220-3 |
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PSMN1R1-30PL,127
NxpSemiconductors
8700
0.5
Cinty Int'l (HK) Industry Co., Limited
PSMN1R1-30PL,127
NXP Semiconductor
7280
1.2025
Viassion Technology Co., Limited
PSMN1R1-30PL,127
WEEN/NXP
2811
1.905
CIS Ltd (CHECK IC SOLUTION LIMITED)
PSMN1R1-30PL,127
NXP/Freescal
4658
2.6075
Redstar Electronic Limited
PSMN1R1-30PL127
NXP
8427
3.31
Dedicate Electronics (HK) Limited