Part Number | PSMN1R6-30PL,127 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | NXP Semiconductors |
Description | MOSFET N-CH 30V 100A TO220AB |
Series | - |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | 100A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Vgs(th) (Max) @ Id | 2.15V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs | 212nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 12493pF @ 12V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 306W (Tc) |
Rds On (Max) @ Id, Vgs | 1.7 mOhm @ 25A, 10V |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-220AB |
Package / Case | TO-220-3 |
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PSMN1R6-30PL,127
NxpSemiconductors
15000
1.69
MY Group (Asia) Limited
PSMN1R6-30PL127
NXP Semiconductor
7105
2.795
Dedicate Electronics (HK) Limited
PSMN1R6-30PL,127
WEEN/NXP
50000
3.9
VIPOWER TECHNOLOGY LIMITED
PSMN1R6-30PL,127
NXP/Freescal
3221
5.005
Authchips Technology Co.,Ltd
PSMN1R6-30PL,127
NXP
20000
6.11
Ande Electronics Co., Limited