Part Number | PSMN1R7-30YL,115 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | NXP Semiconductors |
Description | MOSFET N-CH 30V 100A LFPAK |
Series | - |
Packaging | Cut Tape (CT) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | 100A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Vgs(th) (Max) @ Id | 2.15V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs | 77.9nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 5057pF @ 12V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 109W (Tc) |
Rds On (Max) @ Id, Vgs | 1.7 mOhm @ 15A, 10V |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | LFPAK56, Power-SO8 |
Package / Case | SC-100, SOT-669 |
Image |
PSMN1R7-30YL,115
NxpSemiconductors
6382
1.84
Honeng Electronics Co Ltd
PSMN1R7-30YL,115
NXP Semiconductor
8821
2.34
WEISOK ELECTRONICS (HK) TECHNOLOGY LIMITED
PSMN1R7-30YL,115
WEEN/NXP
4531
2.84
MY Group (Asia) Limited
PSMN1R7-30YL,115
NXP/Freescal
273
3.34
Viassion Technology Co., Limited
PSMN1R7-30YL,115
NXP
9360
3.84
IC Direct Technology Limited