Part Number | PSMN4R6-60BS,118 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | NXP Semiconductors |
Description | MOSFET N-CH 60V 100A D2PAK |
Series | - |
Packaging | Tape & Reel (TR) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 60V |
Current - Continuous Drain (Id) @ 25°C | 100A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 4V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs | 70.8nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 4426pF @ 30V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 211W (Tc) |
Rds On (Max) @ Id, Vgs | 4.4 mOhm @ 25A, 10V |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | D2PAK |
Package / Case | TO-263-3, D²ÂPak (2 Leads + Tab), TO-263AB |
Image |
PSMN4R6-60BS,118
NxpSemiconductors
14000
0.68
MY Group (Asia) Limited
PSMN4R6-60BS118
NXP Semiconductor
99899
1.1775
Shinever Technology Limited
PSMN4R6-60BS,118
WEEN/NXP
50000
1.675
VIPOWER TECHNOLOGY LIMITED
PSMN4R6-60BS118
NXP/Freescal
9700
2.1725
Huajiaxin Electronic Technology (Hong Kong) Co., Limited
PSMN4R6-60BS118
NXP
5998
2.67
Y.H.X ELECTRONIC TECHNOLOGY HK LIMITED