Part Number | PSMN7R6-60XSQ |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | NXP Semiconductors |
Description | MOSFET N-CH 60V TO220AB |
Series | - |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 60V |
Current - Continuous Drain (Id) @ 25°C | 51.5A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 4.6V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs | 38.7nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 2651pF @ 30V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 46W (Tc) |
Rds On (Max) @ Id, Vgs | 7.8 mOhm @ 25A, 10V |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-220F-3 |
Package / Case | TO-220-3 Full Pack, Isolated Tab |
Image |
PSMN7R6-60XSQ
NxpSemiconductors
1510
1.86
MY Group (Asia) Limited
PSMN7R6-60XSQ
NXP Semiconductor
2860
2.555
ONSTAR ELECTRONICS CO., LIMITED
PSMN7R6-60XSQ
WEEN/NXP
4932
3.25
VIPOWER TECHNOLOGY LIMITED
PSMN7R6-60XSQ
NXP/Freescal
2007
3.945
Ande Electronics Co., Limited
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5240
4.64
HK TWO L ELECTRONIC LIMITED