NXP Semiconductors

Description

Dec 16, 2009 VCES. Collector-emitter voltage (VBE = 0). 700. V. VCEO. Collector-emitter voltage (IB = 0). 400. V. VEBO. Emitter-base voltage (IC = 0). 9. V. IC. Collector current. 8. A. ICM. Collector peak current (tP < 5 ms). 16. A. IB. Base current. 4. A. IBM. Base peak current (tP < 5 ms). 8. A. PTOT. Total dissipation at Tc Jun 9, 2012 This FPCN announces the package change of all TO-218 Bipolar Power Transistors currently built at. PSI Manila facility, to package TO-247 manufactured at Nantong-Fujitsu in China facility. The TO-. 247 package will improve device performance and is mechanically compatible with TO-218. On next. VCEV. Collector-emitter voltage (VBE = -1.5 V). 700. V. VCEO. Collector-emitter voltage (IB = 0). 400. V. VEBO. Emitter-base voltage (IC = 0). 12. V. IC. Collector current. 12. A. ICM. Collector peak current (tP < 5ms). 24. A. IB. Base current. 6. A. IBM. Base peak current (tP < 5ms). 12. A. Ptot. Total dissipation at Tc = 25 C. 125. Junction and Storage Temperature Range. TJ, Tstg. 55 to +150. C. Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. FR 5 = 1.0 0.75 0.062 in. 2.