Part Number | RFD12N06RLE |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | NXP Semiconductors |
Description | MOSFET N-CH 60V 18A IPAK |
Series | UltraFET |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 60V |
Current - Continuous Drain (Id) @ 25°C | 18A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 15nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 485pF @ 25V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 40W (Tc) |
Rds On (Max) @ Id, Vgs | 63 mOhm @ 18A, 10V |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-251AA |
Package / Case | TO-251-3 Short Leads, IPak, TO-251AA |
Image |
RFD12N06RLE
NxpSemiconductors
4291
0.84
HK HEQING ELECTRONICS LIMITED
RFD12N06RLE
NXP Semiconductor
5964
1.6525
Yingxinyuan INT'L (Group) Limited
RFD12N06RLE
WEEN/NXP
880
2.465
Gallop Great Holdings (Hong Kong) Limited
RFD12N06RLE
NXP/Freescal
8285
3.2775
Cicotex Electronics (HK) Limited
RFD12N06RLE
NXP
4042
4.09
CIS Ltd (CHECK IC SOLUTION LIMITED)