Part Number | SI1012X-T1-E3 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | NXP Semiconductors |
Description | MOSFET N-CH 20V 500MA SC89-3 |
Series | TrenchFET |
Packaging | |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25°C | 500mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 900mV @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 0.75nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds | - |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 250mW (Ta) |
Rds On (Max) @ Id, Vgs | 700 mOhm @ 600mA, 4.5V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | SC-89-3 |
Package / Case | SC-89, SOT-490 |
Image |
SI1012X-T1-E3
NxpSemiconductors
2555
1.26
HK HEQING ELECTRONICS LIMITED
SI1012X-T1-E3
NXP Semiconductor
4986
2.65
Gallop Great Holdings (Hong Kong) Limited
SI1012X-T1-E3
WEEN/NXP
2576
4.04
WEISOK ELECTRONICS (HK) TECHNOLOGY LIMITED
SI1012X-T1-E3
NXP/Freescal
6911
5.43
Yingxinyuan INT'L (Group) Limited
SI1012X-T1-E3
NXP
6927
6.82
Cicotex Electronics (HK) Limited