NXP Semiconductors

Description

Oct 13, 2003 Notes a. Pulse test: PW v300 ms duty cycle v2%. b. For DESIGN AID ONLY, not subject to production testing. c. Switching time is essentially Jan 1, 2013 SI2301 . P-Channel. Enhancement Mode. Field Effect Transistor. Features. . -20V ,-2.8A, RDS(ON)=120m @VGS=-4.5V. Mar 3, 2008 Si2301 BDS (L1)*. * Marking Code. Notes: a. Pulse width limited by maximum junction temperature. b. Surface Mounted on FR4 board, t 5 s. Sep 11, 2013 ADVANTAGES. There are many advantages of using gesture control over capacitive touch control or more traditional control devices. 1. Introduction. The POEPHYTEREV-I/-E evaluation board is a seamless design demonstrating Texas Instruments. LM5072 PoE product (capable of up to 24W)