Part Number | SI2302DS,215 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | NXP Semiconductors |
Description | MOSFET N-CH 20V 2.5A SOT23 |
Series | TrenchMOS |
Packaging | |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25°C | 2.5A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
Vgs(th) (Max) @ Id | 650mV @ 1mA |
Gate Charge (Qg) (Max) @ Vgs | 10nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds | 230pF @ 10V |
Vgs (Max) | ±8V |
FET Feature | - |
Power Dissipation (Max) | 830mW (Tc) |
Rds On (Max) @ Id, Vgs | 85 mOhm @ 3.6A, 4.5V |
Operating Temperature | -65°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | TO-236AB (SOT23) |
Package / Case | TO-236-3, SC-59, SOT-23-3 |
Image |
SI2302DS,215
NxpSemiconductors
3650
1.02
Gallop Great Holdings (Hong Kong) Limited
SI2302DS215
NXP Semiconductor
34040
1.7875
CIS Ltd (CHECK IC SOLUTION LIMITED)
SI2302DS215
WEEN/NXP
11050
2.555
N&S Electronic Co., Limited
SI2302DS,215
NXP/Freescal
24650
3.3225
N&S Electronic Co., Limited
SI2302DS,215
NXP
3650
4.09
C & I Semiconductors Co., Limited