Part Number | SI2311DS-T1-E3 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | NXP Semiconductors |
Description | MOSFET P-CH 8V 3A SOT23 |
Series | TrenchFET |
Packaging | Tape & Reel (TR) |
FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 8V |
Current - Continuous Drain (Id) @ 25°C | 3A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 800mV @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 12nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds | 970pF @ 4V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 710mW (Ta) |
Rds On (Max) @ Id, Vgs | 45 mOhm @ 3.5A, 4.5V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | SOT-23-3 |
Package / Case | TO-236-3, SC-59, SOT-23-3 |
Image |
SI2311DS-T1-E3
NxpSemiconductors
30617
1.16
HK HEQING ELECTRONICS LIMITED
SI2311DS-T1-E3
NXP Semiconductor
12078
2.5325
Gallop Great Holdings (Hong Kong) Limited
SI2311DS-T1-E3
WEEN/NXP
33900
3.905
WEISOK ELECTRONICS (HK) TECHNOLOGY LIMITED
SI2311DS-T1-E3
NXP/Freescal
6000000
5.2775
Yingxinyuan INT'L (Group) Limited
SI2311DS-T1-E3
NXP
4868000
6.65
Shenzhen WTX Capacitor Co., Ltd.