Rated 
(5/5) based on 8 customer reviews
(5/5) based on 8 customer reviews
| Part Number | SI2365EDS-T1-GE3 |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - Single |
| Brand | NXP Semiconductors |
| Description | MOSFET P-CH 20V 5.9A TO-236 |
| Series | TrenchFET |
| Packaging | Tape & Reel (TR) |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 5.9A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 36nC @ 8V |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Vgs (Max) | ±8V |
| FET Feature | - |
| Power Dissipation (Max) | 1W (Ta), 1.7W (Tc) |
| Rds On (Max) @ Id, Vgs | 32 mOhm @ 4A, 4.5V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | TO-236 |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Image |  |
Lowest Price: $0.78
Highest Price: $4
1 - 5 of 5 Record(s)
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SI2365EDS-T1-GE3
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HK JDW ELECTRONIC CO., LIMITED
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SI2365EDS-T1-GE3
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HK FEILIDI ELECTRONIC CO., LIMITED
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Si2365EDS-T1-GE3
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Part Number:
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NXP Semiconductor
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Part Number:
SI2365EDS-T1-GE3
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WEEN/NXP
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Company:
Cicotex Electronics (HK) Limited
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