(5/5) based on 8 customer reviews
Description
MOSFET 2N-CH 30V 5.8A 8-SOIC Series: LITTLE FOOT? FET Type: 2 N-Channel (Half Bridge) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25～C: 5.8A, 8.2A Rds On (Max) @ Id, Vgs: 18.5 mOhm @ 6.8A, 10V Vgs(th) (Max) @ Id: 3V @ 250米A Gate Charge (Qg) @ Vgs: 10nC @ 5V Input Capacitance (Ciss) @ Vds: - Power - Max: 1W, 1.25W Operating Temperature: -55～C ~ 150～C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154, 3.90mm Width) Supplier Device Package: 8-SO
| Part Number | SI4816BDY-T1-GE3 |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - Arrays |
| Brand | NXP Semiconductors |
| Description | MOSFET 2N-CH 30V 5.8A 8-SOIC |
| Series | LITTLE FOOT |
| Packaging | Cut Tape (CT) |
| FET Type | 2 N-Channel (Half Bridge) |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 5.8A, 8.2A |
| Rds On (Max) @ Id, Vgs | 18.5 mOhm @ 6.8A, 10V |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 10nC @ 5V |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Power - Max | 1W, 1.25W |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Supplier Device Package | 8-SO |
| Image |  |
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