(4/5) based on 5 customer reviews
Description
MOSFET 2P-CH 20V 8A 8-SOIC Series: TrenchFET? FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25～C: 8A Rds On (Max) @ Id, Vgs: 19.2 mOhm @ 8.3A, 10V Vgs(th) (Max) @ Id: 3V @ 250米A Gate Charge (Qg) @ Vgs: 62nC @ 10V Input Capacitance (Ciss) @ Vds: 1945pF @ 10V Power - Max: 3.1W Operating Temperature: -50～C ~ 150～C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154, 3.90mm Width) Supplier Device Package: 8-SO
| Part Number | SI4943CDY-T1-GE3 |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - Arrays |
| Brand | NXP Semiconductors |
| Description | MOSFET 2P-CH 20V 8A 8-SOIC |
| Series | TrenchFET |
| Packaging | Cut Tape (CT) |
| FET Type | 2 P-Channel (Dual) |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 8A |
| Rds On (Max) @ Id, Vgs | 19.2 mOhm @ 8.3A, 10V |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 62nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 1945pF @ 10V |
| Power - Max | 3.1W |
| Operating Temperature | -50°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Supplier Device Package | 8-SO |
| Image |  |
SI4943CDY-T1-GE3
NxpSemiconductors
15000
1.25
HK HEQING ELECTRONICS LIMITED
SI4943CDY-T1-GE3
NXP Semiconductor
40
2.315
Gallop Great Holdings (Hong Kong) Limited
Si4943CDY-T1-GE3
WEEN/NXP
5000000
3.38
Hongkong Shengshi Electronics Limited
SI4943CDY-T1-GE3
NXP/Freescal
4868000
4.445
Shenzhen WTX Capacitor Co., Ltd.
SI4943CDY-T1-GE3
NXP
14000
5.51
MY Group (Asia) Limited
