Part Number | SISB46DN-T1-GE3 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Arrays |
Brand | NXP Semiconductors |
Description | MOSFET ARRAY 2N-CH 40V 1212-8 |
Series | TrenchFET |
Packaging | Cut Tape (CT) |
FET Type | 2 N-Channel (Dual) |
FET Feature | Standard |
Drain to Source Voltage (Vdss) | 40V |
Current - Continuous Drain (Id) @ 25°C | 34A (Tc) |
Rds On (Max) @ Id, Vgs | 11.71 mOhm @ 5A, 10V |
Vgs(th) (Max) @ Id | 2.2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 11nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds | 1100pF @ 20V |
Power - Max | 23W |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | PowerPAK 1212-8 Dual |
Supplier Device Package | PowerPAK 1212-8 Dual |
Image |
SISB46DN-T1-GE3
NxpSemiconductors
180
0.55
SUNTOP SEMICONDUCTOR CO., LIMITED
SiSB46DN-T1-GE3
NXP Semiconductor
35800
0.8975
WEISOK ELECTRONICS (HK) TECHNOLOGY LIMITED
SISB46DN-T1-GE3
WEEN/NXP
14830
1.245
East Pioneer Electronic Co., Limited
SISB46DN-T1-GE3
NXP/Freescal
52528
1.5925
N&S Electronic Co., Limited
SISB46DN-T1-GE3
NXP
4134
1.94
N&S Electronic Co., Limited