Part Number | STB13N60M2 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | NXP Semiconductors |
Description | MOSFET N-CH 600V 11A D2PAK |
Series | MDmesh,II Plus |
Packaging | Tape & Reel (TR) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 600V |
Current - Continuous Drain (Id) @ 25°C | 11A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 17nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 580pF @ 100V |
Vgs (Max) | ±25V |
FET Feature | - |
Power Dissipation (Max) | 110W (Tc) |
Rds On (Max) @ Id, Vgs | 380 mOhm @ 5.5A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | D2PAK |
Package / Case | TO-263-3, D²ÂPak (2 Leads + Tab), TO-263AB |
Image |
Hot Offer
STB13N60M2
NXP
1000
6.36
Passive Components Sourcing. Limited
STB13N60M2
NxpSemiconductors
20000
1.52
HK XINYI COMPONENTS ASIA CO., LIMITED
STB13N60M2
NXP Semiconductor
15549
2.73
Gallop Great Holdings (Hong Kong) Limited
STB13N60M2
WEEN/NXP
2000
3.94
WIDEY INTERNATIONAL LIMITED
STB13N60M2
NXP/Freescal
201710
5.15
N&S Electronic Co., Limited