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Description
Dec 5, 2014 STP110N8F6 . N-channel 80 V, 0.0056 typ.,110 A, STripFET F6. Power MOSFET in a TO-220 package. Datasheet - production data. Mar 1, 2016 Mfr Site. Date. STP110N8F6 . R1DZ*7D8GBC2. A. SHENZHEN B/E. 2016-03-01. Amount. UoM. Unit type. ST ECOPACK Grade. 1900.00 mg. L638*. L639*. L649*. STGAP1S. STG*H65DFB. STG*H120DF2. SCT*N120. -. Fb. -. STP110N8F6 . ST*N8F7. ST*N10F7. STP90N55F4. STP110N55F6 bypass. L7987*. DC-AC . NPC. L638*. L639*. L649*. STGAP1S. STG*H65DFB. STG* H120DF2. SCT*N120. -. FB. -. STP110N8F6 . ST*N8F7. ST*N10F7. STP90N55F4 .
| Part Number | STP110N8F6 |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - Single |
| Brand | NXP Semiconductors |
| Description | MOSFET N-CH 80V 110A TO-220 |
| Series | STripFET,F6 |
| Packaging | Tube |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 80V |
| Current - Continuous Drain (Id) @ 25°C | 110A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 150nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 9130pF @ 40V |
| Vgs (Max) | ±20V |
| FET Feature | - |
| Power Dissipation (Max) | 200W (Tc) |
| Rds On (Max) @ Id, Vgs | 6.5 mOhm @ 55A, 10V |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220 |
| Package / Case | TO-220-3 |
| Image |  |
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