(5/5) based on 1 customer reviews
Description
Oct 12, 2015 The TPD1E6B06 device is a single-channel TVS. 1 IEC 61000- 4 -2 Level 4 ESD Protection diode for electrostatic discharge (ESD) protection in R-5 6. Electrolytic Capacitor Lifetime . D.F. = 73.0 . PC101. Tj (max) = 125 j-c = 500 /W. TLP291 . Pd =7 mW. Jul 24, 2017 Q3. CSD19533Q5A. 2.0. R14. 10. R8. GND. TLP291 (GRL-TP,SE. 1. 2. 4 . 3. U3. 3. 2. 1. U4. TLV431ACDBZR. 15.0k. R24. 0.015 F. C22. 180pF. Nov 15, 2016 High Efficiency IEEE 802.3bt (PoE++, Type 4 , 62W/71W) PD .. WURTH 744316470. ISO1 TLP291 (GR-TP,E). 1. 2. 4 . 3. 330pF. C25. E5. 4 . CAP CER 1UF 6.3V 10% X7R (0402). Samsung CL05B105KQ5NQNC. C4, C5 , C7, C201, C206, . Toshiba TLP291 (GRL-TP,SE(T. U104. 0. Not installed
| Part Number | TLP2914 |
| Main Category | Isolators |
| Sub Category | Optoisolators - Transistor, Photovoltaic Output |
| Brand | NXP Semiconductors |
| Description | OPTOISOLTR 2.5KV 4CH TRANS 16-SO |
| Series | - |
| Packaging | Cut Tape (CT) |
| Number of Channels | 4 |
| Voltage - Isolation | 2500Vrms |
| Current Transfer Ratio (Min) | 100% @ 5mA |
| Current Transfer Ratio (Max) | 400% @ 5mA |
| Turn On / Turn Off Time (Typ) | 3µs, 3µs |
| Rise / Fall Time (Typ) | 2µs, 3µs |
| Input Type | DC |
| Output Type | Transistor |
| Voltage - Output (Max) | 80V |
| Current - Output / Channel | 50mA |
| Voltage - Forward (Vf) (Typ) | 1.2V |
| Current - DC Forward (If) (Max) | 50mA |
| Vce Saturation (Max) | 400mV |
| Operating Temperature | -55°C ~ 110°C |
| Mounting Type | Surface Mount |
| Package / Case | 16-SOIC (0.179", 4.55mm Width) |
| Supplier Device Package | 16-SO |
| Image |  |
Hot Offer
TLP291-4
NxpSemiconductors
3310
1.45
ALLCHIPS ELECTRONICS LIMITED
TLP291-4
NXP Semiconductor
1000
2.8
Shenzhen yuanrong Electronics Limited
TLP291-4(GB-TP.E)
WEEN/NXP
3300
4.15
TOP-Q COMPONENT PTE. LTD
TLP291-4(GB-
NXP/Freescal
4000
5.5
TAE SUNG ELCOM CORP.LTD
TLP291-4(GB-TP.E(T
NXP
10000
6.85
KEMING ELECTRONICS DEVELOPMENT CO., LIMITED
